surmount tm low barrier tee ?0301? footprint silicon schottky diodes m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without noti ce. m/a - com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose , nor does m/a - com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. 1 series v1 MA4E2513 - 1289 features extremely low parasitic capitance and inductance extremely small ?0301? (1000 x 300um) footprint surface mountable in microwave circuits, no wirebonds required rugged hmic construction with polyimide scratch protection reliable, multilayer meta lization with a diffusion barrier, 100% stabilization bake (300 c, 16 hours ) lower susceptibility to esd damage description an d applications the MA4E2513l - 1289 surmount ? diodes are silicon low barrier schottky devices fabricated with the patented hetero lithic microwave integrated circuit (hmic) process. hmic circuits consist of silicon pedestals which form diodes or via condu ctors embedded in a glass dielectric, which acts as the low dispersion, microstrip transmission medium. the combination of silic on and glass allows hmic devices to have excellent loss and power dissipation characteristics in a low profile, reliable device . the surmount schottky devices are excellent choices for circuits requiring the small parasitics of a beam lead device couple d with the superior mechanical performance of a chip. the surmount structure employs very low resistance silicon vias to connec t the schottky contacts to the metalized mounting pads on the bottom surface of the chip. these devices are reliable, repeatable , and a lower cost performance solution to conventional devices. they have lower susceptibility to electrostatic discharge than conventional beam lead schottky diodes. the multi - layer metalization employed in the fabricatio n of the surmount schottky ju nctions includes a platinum diffusion barrier, which permits all devices to be subjected to a 16 - hour non - operating stabilizati on bake at 300 c. the extremely small ? 0301 ? outline allows for surface mount placement and multi - functional polarity orie ntations. case style 1289 top, side and bottom views dim inches millimeters min. max. min. max. a 0.038 0.040 0.975 1.025 b 0.011 0.013 0.275 0.325 c 0.004 0.008 0.102 0.203 d 0.007 0.175 e 0.007 0.009 0.175 0.225 0.009 0.225 the MA4E2513l - 1289 surmount low barrier schottky diodes are recommended for use in microwave circuits through ku band frequenc ies for lower power applications such as mixers, sub - harmonic mixers, detectors and limiters. the hmic construction facilitates the direct replacement of more fragile beam lead diodes with the corresponding surmount diode, which can be connected to a ha rd or soft substrate circuit with solder. a b c b d e d e d cathode 1 common anode 2
surmount tm low barrier tee ?0301? footprint silicon schottky diodes m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without noti ce. m/a - com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose , nor does m/a - com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. 2 series v1 MA4E2513 - 1289 electrical specifications @ 25 c (per junction) handling all semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin oils. the use of plastic tipped tweezers or vacuum pickups is strongly recommended for individual components. the top surface of the die has a protective polyimide coating to minimize damage. the rugged construction of these surmount devices allows the use of standard handling and die attach techniques. it is important to note that industry standard electrostatic discharge (esd) cont rol is required at all times, due to the sensitive nature of schottky junctions. bulk handling should insure that abrasion an d mechanical shock are minimized. die bonding die attach for these devices is made simple through the use of surface mount die attach technology. mounting pads ar e conveniently located on the bottom surface of these devices, and are opposite the active junction. the devices are well suite d for higher temperature solder attachment onto hard substrates. 80au/20sn and sn63/pb37 solders are acceptable for usage. die attach with electrically conductive silver epoxy is not recommended. for hard substrates, we recommend utilizing a vacuum tip and force of 60 to 100 grams applied uniformly to the top surface of the device, using a hot gas bonder with equal heat applied across the bottom mounting pads of the device. when soldering to soft substrates, it is recommended to use a lead - tin interfac e at the circuit board mounting pads. position the die so that its mounting pads are aligned with the circuit board mounting pad s. reflow the solder paste by applying equal heat to the circuit at both die - mounting pads. the solder joint must not be made on e at a time, creating un - equal heat flow and thermal stress. solder reflow should not be performed by causing heat to flow thro ugh the top surface of the die. since the hmic glass is transparent, the edges of the mounting pads can be visually inspected t hrough the die after die attach is completed. absolute maximum ratings @ 25 c (unless otherwise noted) 1 1. operation of this device above any one of these parameters may cause permanent damage. parameter absolute maximum operating temperature - 40 c to +150 c storage temperature - 40 c to +150 c junction temperature +175 c forward current 20 ma reverse voltage 5 v rf c.w. incident power + 20 dbm rf & dc dissipated power 50 mw rt is the dynamic slope resistance where rt = rs + rj , where rj =26 / idc ( idc is in ma) and rs is the ohmic resistance. model number type recommended frequency range vf @ 1 ma ( mv ) ct @ 0 v ( pf ) rt slope resistance ( vf1 - vf2 ) / (10.5ma - 9.5ma ) ( w ) ma4e25 13l - 1289 low barrier dc - 18 ghz 330 max 300 typ 0.12 max 0.10 typ 1 0 typ 14 max vb @ 10 ua (v) 3 min 5 typ
surmount tm low barrier tee ?0301? footprint silicon schottky diodes m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without noti ce. m/a - com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose , nor does m/a - com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. 3 series v1 MA4E2513 - 1289 MA4E2513l - 1289 low barrier spice parameters is (na) rs ( w ) n cj0 ( pf ) m ik (ma) cpar (pf) vj (v) fc bv (v) ibv (ma) 26 12.8 1.20 1.0 e - 2 0.5 14 9.0 e - 2 8.0 e - 2 0.5 5.0 1.0 e - 2 circuit moun t ing dimensions (inches) ordering i n formation part number package MA4E2513l - 1289w wafer on frame MA4E2513l - 1289 die in carrier MA4E2513l - 1289t tape/reel typical performance 0.007 0.010 0.008 0.007 0.010 0.000 0.020 0.040 0.060 0.080 0.100 0.120 0.140 0 100 200 300 400 500 frequency (mhz) total capacitance (pf)
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